STMicroelectronics BC858A
BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC ICM IBM IEM Ptot Tstg Tj Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at Tc = 25 oC Storage Temperature Max.| Part No. | BC858A |
|---|---|
| Datasheet | BC858A Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL PNP TRANSISTORS |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol P a ram et er Test Conditions ICBO Collector Cut-off Current (IE = 0) VCE = -30 V VCE = -30 V Ta mb = 150 oC V(BR)CES ∗ Collect or-Emitter Breakdown Voltage (VBE = 0) IC = -10 µA for BC857 for BC858 V( BR)CBO ∗ Collect or-Base Breakdown Voltage (IE = 0) IC = -10 µA for BC857 for BC858 V( BR)CEO ∗ Collect or-Emitter Breakdown Voltage (IB = 0) V(BR)EBO Em it t er -Base Breakdown Voltage (IC = 0) VCE(sat)∗ Collect or-Emitter Saturation Voltage IC = -2 mA for BC857 for BC858 IC = -10 µA for BC857 for BC858 IC = -10 mA IC = -100 mA IB = -0.5 mA IB = -5 mA VBE(s at)∗ Base-Emitt er Saturation Voltage IC = -10 mA IB = -0.5 mA IC = -100 mA IB = -5 mA VBE(on)∗ Base-Emitt er O n Voltage IC = -2 mA VCE = -5 V IC = -10 mA VCE = -5 V hFE DC Current G ain IC = -10 µA for group A for group B IC = -2 mA for group A for group B VCE = -5 V VCE = -5 V fT Transit ion F requency IC = -10 mA VCE = -5 V f = 100MHz CCB Collect or Bas...
