STMicroelectronics BD179
NPN power transistor
FEATURES
● NPN transistorAPPLICATIONS
t(s)● General purpose switching ucDescription rodThe device is manufactured in Planar technology with “Base Island” layout. The resulting transistor Pshows exceptional high gain performance Obsolete Product(s) - Obsoletecoupled with very low saturation voltage. SOT-32 (TO-126) 1 32 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking BD179 BD179 Package SOT-32 Packaging Tube July 2007 Rev 2 1/9 9 Electrical ratings 1 Electrical ratings BD179 Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 80 V VCEO Collector-base voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 5V IC Collector current 3A ICM t(s)IB cPTOT duTstg Obsolete Product(s) - Obsolete ProTJ Collector current current (tp < 5ms) Base current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature