STMicroelectronics BD239C
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.| Part No. | BD239C |
|---|---|
| Datasheet | BD239C Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN power transistor |
| Buy | Stock & Price |
FEATURES
● NPN transistorAPPLICATIONS
● General purpose switching and amplifier transistorDESCRIPTION
The PNP type is the BD240C. TO-220 3 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD239C Marking BD239C Package TO-220 Packaging Tube July 2007 Rev 2 1/9 9 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum rating Parameter VCER VCEO VEBO IC ICM IB PTOT PTOT Tstg TJ Collector-emitter voltage (RBE = 100Ω) Collector-base voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase ≤ 25°C Total dissipation at Tamb ≤ 25°C Storage temperature Max. operating junction temperature BD239C Value 115 100 5 2 4 0.6 30 2 -65 to
