STMicroelectronics BD241BFP
The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP.| Part No. | BD241BFP |
|---|---|
| Datasheet | BD241BFP Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERSDESCRIPTION
The complementary PNP types is the BD242BFP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. O perating Junction Temperature o Value BD241BFP BD242BFP 90 80 5 3 5 1 24 -65 to 150 150 Uni t V V V A A A W o o C C For PNP types voltage and current values are negative. April 1998 1/4 BD241BFP / BD242BFP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 5.3 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CEO I CES I EBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 60 V V CE = 80 V V EB = 5 V I C = 30 mA 80 Min.
