STMicroelectronics BD241C
The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.FEATURES
● NPN transistorsAPPLICATIONS
● Audio, general purpose switching and amplifier transistorsDESCRIPTION
The PNP types are BD242A and BD242C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes BD241A BD241C Marking BD241A BD241C Package TO-220 TO-220 Packaging Tube Tube July 2007 Rev 2 1/9 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter VCER VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-emitter voltage (RBE = 100Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tp < ms) Base current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature BD24