STMicroelectronics BD242C
The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively.| Part No. | BD242C |
|---|---|
| Datasheet | BD242C Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CER V CEO V EBO IC I CM IB P tot P tot T stg Tj Collector-Base Voltage (R BE = 100 Ω ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD241A BD242A 70 60 Value BD241B BD242B 90 80 5 3 5 1 40 2 -65 to 150 150 BD241C BD242C 115 100 V V V A A A W W o o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 BD241A/B/C/BD242A/B/C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.13 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Co...
