STMicroelectronics BD679
The devices are manufactured in planar base island technology with monolithic Darlington configuration.FEATURES
● Good hFE linearity● High fT frequency
● Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
APPLICATIONS
● Linear and switching industrial equipmentDESCRIPTION
. 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 January 2008 Rev 5 Package SOT-32 R2 typ.= 100 Ω Packaging Tube 1/12 12 Contents Contents BD6xxx 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristic (curves) . . . . . . . . . . . .