STMicroelectronics BD912
The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively.| Part No. | BD912 |
|---|---|
| Datasheet | BD912 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO VEBO I E ,IC IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BD909 BD910 80 80 5 15 5 90 -65 to 150 150 BD911 BD912 100 100 Un it V V V A A W o o C C Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BD909 / BD910 / BD911 / BD912 THERMAL DATA R thj -case Thermal Resistance Junction-case Max 1.4 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD909/910 for BD911/912 T case = 150 oC for BD909/910 for BD911/912 for BD909/910 for BD911/912 V EB = 5 V I C = 100 mA for BD909/910 for BD911/912 I B = 0.5 A IB = 2.5 A IB = 2.5 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V V CE = 4 V 40 15 5 3 80 100 1 3 2.5 1.5 250 150 MHz V CB = 80 V V CB = 100 V V CB = 80 V V CB = 100 V V CE = 40 V V CE = 50 V Min.
