BDW94B Datasheet | STMicroelectronics

DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The plementary PNP type is BDW94C. Also BDW94B is a PNP type. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature o Value BDW93C BDW94B 80 80 12 15 0.2 80 -65 to 150 150 BDW94C 100 100 Un it V V A A A W o o Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance Junction-case 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C for BDW94B for BDW93C/94C V EB = 5 V I C = 100 m A for BDW94B for BDW 93C/94C IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 3 A IC = 5 A I C = 10 A IF = 5 A I F = 10 A IC = 1 A f = 1 MHz V CE = 10 V 20 I B = 20 m A I B = 100 m A I B = 20 m A I B = 100 m A V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 1.3 1.8 V CB = 80 V VCB = 100 V V CB = 80 V VCB = 100 V V CE = 80 V VCE = 100 V Min. Typ. Max. 100 100 5 5 1 1 2 Unit µA µA m A m A m A m A m A I CEO IEBO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ h FE∗ Collector-Emitt er Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain 80 100 2 3 2.5 4 20K 2 4 V V V V V V - h fe Parallel-diode Forward Voltage Small Signal Current Gain ∗ Pulsed: Pulse duration = 300 µs, duty cycle...