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BDX33B - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

General Description

The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.

They are intented for use in power linear and switching applications.

The complementary PNP types are BDX34B and BDX34C respectively.

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Other Datasheets by STMicroelectronics

Part Number Description
BDX33C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX34B COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX53B COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BDX53C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature BDX33B BDX34B 80 80 10 15 0.