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BDX53B - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

General Description

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Figure 1.

Table 1.

Key Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Audio amplifiers ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C BDX54B BDX54C R1 typ.= 10 kΩ R2 typ.= 150 Ω Package TO-220 Packaging Tube October 2007 Rev 4 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings BDX53B - BDX53C - BDX54B - BDX54C Note: Table 2.