STMicroelectronics BDX53BFP
The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.| Part No. | BDX53BFP |
|---|---|
| Datasheet | BDX53BFP Download |
| Manufacturer |  STMicroelectronics |
| Description | SILICON POWER DARLINGTON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTINGDESCRIPTION
3 1 2 T0-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 ΩABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot Visol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c ≤ 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 80 80 5 8 12 0.2 29 1500 -65 to 150 150 Unit V V V A A A W V o o C C February 2003 1/4 BDX53BFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.3 70 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I EBO...
