BDY90
DESCRIPTION
The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment.
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Value V CBO V CEV V CEO V EBO IC I CM IB P tot T stg Tj Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature 120 120 100 6 10 15 2 60 -65 to 175 175 V V V V A A A W o o
June 1997
1/4
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 2.5 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CBO I CEV
Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0)
Test...
