BF3510TV Datasheet | STMicroelectronics

® FULL 50-60Hz RECTIFICATION BRIDGE PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS PACT ISOTOP DESIGN PATIBLE WITH FAST DIODES AND TRANSISTORS. EXCELLENT THERMAL TRANSFER BETWEEN JUNCTION AND HEATSINK UL PENDING DESCRIPTION The Bridges series from ST Microelectronics has been designed to allow a better standardization of packages on boards principally designed with ISOTOP packages. The insulated package of the bridge will be able to sit on heatsink with other ponents. Single phase and 3-phase high power SMPS, UPS, MOTOR DRIVES and WELDING equipment will primarily find advantage in these industry package products. 35 A 1000 V 150 °C 1.30 V + + - ISOTOPTM ABSOLUTE RATINGS AND ELECTRICAL CHARACTERISTICS (per diode unless specified) Symbol VRRM VRSM IF(AV) total IFSM I2.t Tstg Tj Pmax total Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage Average forward current Tc = 80°C sinusoidal Surge non repetitive forward current 50Hz JEDEC method Fusing Storage temperature range Maximum operating junction temperature Totol power dissipation Value 1000 1000 35 300 660 - 55 to + 150 150 50 Unit V V A A A2.s °C °C W TM : ISOTOP is a trademark of ST Microelectronics. August 1999 - Ed: 2A 1/3 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter total Value 0.5 Unit °C/W ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR - Parameter Reverse leakage current Test Conditions VR = 0.8 VRRM δ < 2% tp = 5ms IF = 35 A δ < 2% tp = 380µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min. Typ. Max. 10 0.2 1.4 1.3 Unit µA m A V V - - Forward voltage drop Pulse test : - tp = 5 ms, duty cycle < 2 % - - tp = 380 µs, duty cycle < 2 % For one diode: Pcond = 1.02 x IF(AV) + 0.008 x I2F(RMS) Tj = Pcond x 4 x Rth(j-c) + Tc 2/3 PACKAGE MECHANICAL DATA ISOTOP (Plastic) DIMENSIONS Millimeters Inches Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P...