BN15D100 - NPN Transistor

Datasheet Summary

Description

The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

Figure 1.

Table 1.

Features

Good hFE linearity.
High fT frequency.
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

STMicroelectronics

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Datasheet Details

Part number	BN15D100
Manufacturer	STMicroelectronics
File Size	103.42 KB
Description	NPN Transistor
Datasheet	BN15D100 Datasheet
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2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 D²PAK Figure 1. Internal schematic diagrams R1 = 8 kΩ R2 = 150 Ω Table 1. Device summary Order code 2STBN15D100T4 Marking BN15D100 Package D²PAK January 2010 Doc ID 16117 Rev 2 Packaging Tape and reel 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2.

Published: Mar 2, 2021 |