Datasheet Details
| Part number | BSX26 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.64 KB |
| Description | HIGH-SPEED SATURATED SWITCH |
| Datasheet | BSX26_STMicroelectronics.pdf |
|
|
Overview: BSX26 HIGH-SPEED SATURATED SWITCH.
| Part number | BSX26 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.64 KB |
| Description | HIGH-SPEED SATURATED SWITCH |
| Datasheet | BSX26_STMicroelectronics.pdf |
|
|
|
The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case.
It is designed for switching applications up to 500 mA.
TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4 500 0.36 1.2 0.68 – 65 to 200 Unit V V V V mA W W W °C 1/6 T s t g, T j November 1988 Free Datasheet http://.datasheet.in/ BSX26 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CE S V (B R)CBO V (B R)CES V (BR)CE O * V (B R)E BO V CE( sat )* Parameter Collector Cutoff Current (V BE = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CE = 20 V V CE = 20 V I C = 100 µA I C = 100 µA I C = 10 mA I E = 100 µA I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 mA T amb = 85 °C I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 mA f = 100 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz IB IB IB IB = 3 mA = 10 mA = 30 mA = 3 mA 0.75 T am b = 85 °C 40 40 15 4 0.16 0.18 0.39 0.18 I B = 3 mA I B = 10 mA I B = 30 mA V CE = 0.4 V V CE = 0.5 V V CE = 1 V V CE = 10 V 350 V EB = 0.5 V 6.5 V CB = 5 V 3.3 8 9 5 18 15 pF ns ns 8 pF 550 MHz 0.82 0.97 1.3 60 55 0.18 0.28 0.5 0.3 0.95 1.2 1.7 120 Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| SGS-ATES | BSX26 | NPN Transistor | SGS-ATES |
| Part Number | Description |
|---|---|
| BSX20 | NPN Transistor |