FEATURES
Symbol IT(RMS) VDRM / VRRM IGT(Q1) Value 4 600 10 Unit A V mA G A2 A1 A2 DESCRIPTION
A1 A2 G TO-220AB ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS) ITSM I2t dI/dt IGM PG(AV) Tstg Tj Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t value for fusing Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns Peak gate Average gate power dissipation Storage junction temperature range Operating junction temperature range TO-220AB F = 50 Hz F = 60 Hz Tc = 105°C t = 20 ms t = 16.7 ms tp = 10ms Repetitive F = 100Hz tp = 20µs Tj = 125°C Tj = 125°C Value 4 35 38 6 50 4 0.5 -40 to +150 -40 to +125 A2s A/µs A W °C Unit A A March 2002 - Ed: 1A 1/5 BTB04-600SL ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified) Symbol IGT (1) VD = 12V Test conditions RL = 30Ω Quadrant I - II - III IV VGT VGD IH(2) IL VD = 12V VD = VDRM IT = 100mA IG = 1.2IGT I - III - IV II dV/dt (2) (dV/dt)c (2) VD = 67% VDRM gate open Tj = 125°C (dI/dt)c = 1.8A/ms Tj = 125°C MIN.
STMicroelectronics
