BTB12C Datasheet | STMicroelectronics

FEATURES DESCRIPTION The BTA/BTB12 B/C triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 500m A di G/dt = 1A/µs Parameter BTA BTB Tc = 90 °C Tc = 95 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 BTA / BTB12-... B/C 600 600 700 700 800 800 V 125 120 72 10 50 - 40 to + 150 - 40 to + 125 260 °C °C °C A2s A/µs A Value 12 Unit A A1 A2 G TO220AB (Plastic) ITSM I2t d I/dt Symbol Unit March 1995 1/5 BTA12 B/C / BTB12 B/C THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTA BTB Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) BTA BTB Parameter Value 60 3.3 2.7 2.5 2.0 °C/W Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) G (AV) .. P = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant B IGT VD=12V (DC) RL =33Ω Tj=25°C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL =33Ω Tj=25°C Tj=110°C Tj=25°C Tj=25°C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH - VTM - IDRM IRRM d V/dt - IT= 500m A gate open ITM= 17A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=110°C Tj=110°C MAX MAX MAX MAX MIN 250 MAX MAX MAX MIN TYP TYP 40 70 50 1.5 0.01 0.5 100 V/µs 50 100 1.5 0.2 2 20 35 25 m A V m A Suffix C 25 50 V V µs m A m A Unit VD=VDRM R L=3.3k Ω VD=VDRM IG = 500m A d...