STMicroelectronics BU208D
The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.| Part No. | BU208D |
|---|---|
| Datasheet | BU208D Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION FOR COLOUR TVDESCRIPTION
3 2 3 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2.ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj June 1998 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) TO - 3 Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 8 15 T O - 218 125 150 ISOW ATT 218 50 -65 to 150 150 150 175 Unit V V V A A W o o -65 to 175 -65 to 150 C C 1/8 BU208D / BU508D / BU508DFI THERMAL DATA T O-3 R t hj-ca se Thermal Resistance Junction-case Max 1 TO-218 1 ISO WATT218 2.5 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V CE(sat )∗ V BE(s at)∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltag...
