STMicroelectronics BUF410
The BUF410 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.| Part No. | BUF410 |
|---|---|
| Datasheet | BUF410 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROLDESCRIPTION
3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj Tj July 1997 Parameter Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 o C Storage Temperature Max O peration Junction Temperature Max. Operating Junction T emperature Valu e 850 450 7 15 30 3 4.5 125 -65 to 150 150 150 Un it V V V A A A A W o o o C C C 1/6 BUF410 THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max 1 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 100 Ω) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min. Typ . Max.
