STMicroelectronics BUF420
The BUF420 and BUF420M are manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.| Part No. | BUF420 |
|---|---|
| Datasheet | BUF420 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROLDESCRIPTION
1 2 TO-3 (version ”R”) TO-218 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2.ABSOLUTE MAXIMUM RATINGS
Symb ol V CEV V CEO VEBO IC I CM IB I BM P tot T s tg Tj July 1997 Parameter Collector-Emitter Voltage (VBE = -1.5 V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T O-218 T otal Dissipation at Tc = 25 C Storage Temperature Max O peration Junction Temperature o Valu e 850 450 7 30 60 6 9 TO -3 200 -65 to 150 150 200 Un it V V V A A A A W o o C C 1/7 BUF420 / BUF420M THERMAL DATA T O-218 R t hj-ca se Thermal Resistance Junction-Case Max 0.63 TO-3 0.63 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV T c = 100 C o Min.
