STMicroelectronics BUF420A
The BUF420A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.| Part No. | BUF420A |
|---|---|
| Datasheet | BUF420A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROLDESCRIPTION
TO-218 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1000 450 7 30 60 6 9 200 -65 to 150 150 Uni t V V V A A A A W o o C C June 2000 1/6 BUF420A THERMAL DATA R t hj-ca se Thermal Resistance Junction-Case Max 0.63 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1000 V V CE = 1000 V V CE = 1000 V V CE = 1000 V V BE = 5 V I C = 200 mA L = 25 mH 450 Tc = 100 o C Tc = 100 C o Min.
