STMicroelectronics BUF420M
The BUF420M is manufactured using High leVoltage Multi Epitaxial Planar technology for high soswitching speeds and high voltage capacity. It buses a Cellular Emitter structure with planar edge Otermination to enhance switching speeds while -maintaining a wide RBSOA.MAXIMUM RATINGS
Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 850 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 7V IC Collector Current 30 A ICM Collect