STMicroelectronics BUH2M20AP
The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.| Part No. | BUH2M20AP |
|---|---|
| Datasheet | BUH2M20AP Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR.DESCRIPTION
3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 2000 1200 5 30 40 20 -65 to 150 150 Unit V V V mA mA W o o C C September 1998 1/4 BUH2M20AP THERMAL DATA R thj-case Thermal Resistance Junction-case Max 6.25 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO VCEO V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ C ob Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Output Ca...
