STMicroelectronics BUL129D
The device is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds while maintaining the wide RBSOA. The device is designed to be used in electronics transformers for halogen lamps.| Part No. | BUL129D |
|---|---|
| Datasheet | BUL129D Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
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● PRELIMINARY DATA NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 1 2 3
APPLICATIONS
● ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS TO-220DESCRIPTION
Internal Schematic Diagram Order Codes Part Number BUL129D Marking BUL129D Package TO-220 Packing TUBE December 2005 rev.1 1/7 7 1ABSOLUTE MAXIMUM RATINGS
BUL129D 1 Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ *ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tP < 5ms) Base Current Base Peak Current (tP < 5ms) Total dissipation at Tc = 25 oC Storage Temperature Max. Operating Junction Temperature Value 800 450 9 4 8 2 4 65 -65 to 150 150 Unit V V V A A A A W oC oC Table 2. Symbol Rthj-case Rthj-amb Thermal Data Parameter Thermal Resistance Junction-Case________...
