STMicroelectronics BUL138FP
The BUL138FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.| Part No. | BUL138FP |
|---|---|
| Datasheet | BUL138FP Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERSDESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 800 400 9 5 10 2 4 33 1500 -65 to 150 150 Unit V V V A A A A W V o o C C September 2003 1/6 BUL138FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.8 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 800 V V CE = 800 V V CE = 400 V I C = 100 mA L = 25 mH 400 T j = 125 o C Min.
