BUL213 Datasheet | STMicroelectronics

DESCRIPTION The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1300 600 9 3 6 2 4 60 -65 to 150 150 Unit V V V A A A A W o o February 2003 1/6 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.08 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I CEO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Test Conditions V CE = 1300 V V CE = 1300 V V CE = 600 V I C = 100 m A L = 25 m H 600 T c = 125 o C Min. Typ. Max. 100 500 250 Unit µA µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I E = 10 m A I C = 0.5 A IC = 1 A I C = 0.5 A IC = 1 A I C = 0.35 A I C = 10 m A IC = 1 A I B1 = 0.2 A L = 200 µ H IC = 1 A I B1 = 0.2 A L = 200 µ H I B = 0.1 A I B = 0.2 A I B = 0.1 A I B = 0.2 A V CE = 3 V V CE = 5 V V CL = 400 V I B2 = -0.4 A V CL = 400 V I B2 = -0.4 A T c = 125 o C 9 0.5 0.9 1.2 1.5 16 12 4 250 5.2 380 36 V V V V V ts tf ts tf 6 420 µs ns µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 Safe...