BUL312FH Description
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A. RATINGS Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj August 2002 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB =...