STMicroelectronics BUL312FH
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A.| Part No. | BUL312FH |
|---|---|
| Datasheet | BUL312FH Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: INTERNAL SCHEMATIC DIAGRAMDESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Visol Tstg Tj August 2002 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 °C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1150 500 9 5 10 3 4 36 2500 –65 to 150 150 Unit V V V A A A A W V °C °C 1/6 BUL312FH THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.47 62.5 °C/W °C/WELECTRICAL CHARACTERISTICS
(Tj = 25 °C unless otherwise specified) Symbol ICES ICEO VEBO VCEO(sus)* Parameter Collector Cut-off Current (VBE = 0) Collector Cut-off Current (IB = 0) Emitter-Base Voltage (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0)...
