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BUL510 - NPN Transistor

General Description

bsThe BUL510 is manufactured using high voltage OMultiepitaxial Mesa technology for cost-effective -high performance.

It uses a Hollow Emitter )structure to enhance switching speeds.

t(sThe BUL series is designed for use in lighting capplications and low cost switch-mode power usupplies.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® BUL510 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS )s VERY HIGH SWITCHING SPEED t(ss FULLY CHARACTERIZED AT 125oC ucAPPLICATIONS ds ELECTRONIC BALLASTS FOR roFLUORESCENT LIGHTING Ps SWITCH MODE POWER SUPPLIES tes ELECTRONIC TRANSFORMER FOR HALOGEN LAMP oleDESCRIPTION bsThe BUL510 is manufactured using high voltage OMultiepitaxial Mesa technology for cost-effective -high performance. It uses a Hollow Emitter )structure to enhance switching speeds. t(sThe BUL series is designed for use in lighting capplications and low cost switch-mode power usupplies.