STMicroelectronics BUL903EDFP
The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application.| Part No. | BUL903EDFP |
|---|---|
| Datasheet | BUL903EDFP Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
FOUR LAMP ELECTRONIC BALLAST FOR 120 V MAINS IN PUSH-PULL CONFIGURATIONDESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 900 400 7 5 8 2 4 35 1500 -65 to 150 150 Unit V V V A A A A W V o o C C September 2003 1/7 BUL903EDFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.57 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 0) Test Conditions V CE = 900 V V EB = 7 V I C = 100 µ A 900 Min.
