STMicroelectronics BULB128-1
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.| Part No. | BULB128-1 |
|---|---|
| Datasheet | BULB128-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTINGDESCRIPTION
The device is designed for use in lighting applications and low cost switch-mode power supplies. I2PAK (TO-262) (Suffix "-1") INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o C C September 2003 1/7 BULB128-1 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V I E = 10 mA I C = 100 mA L = 25 mH T C = 125 o C 9 400 Min.
