Datasheet4U.com

BULB128D-1 Datasheet PDF

STMicroelectronics BULB128D-1

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Part No. BULB128D-1
Datasheet BULB128D-1 Download
Manufacturer
STMicroelectronics
Description NPN Transistor
Buy Stock & Price
BULB128D-1 datasheet page 1 preview

APPLICATIONS

: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s INTERNAL SCHEMATIC DIAGRAM

DESCRIPTION

The device is designed for use in lighting applications and low cost switch-mode power supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o C o C 1/7 September 2003 BULB128D-1 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified) Symbol I...
BULB128D-1 page 2 preview BULB128D-1 page 3 preview