Datasheet4U Logo Datasheet4U.com

BULD741T4 - High voltage fast-switching NPN power transistor

Download the BULD741T4 datasheet PDF. This datasheet also covers the BULD741 variant, as both devices belong to the same high voltage fast-switching npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BULD741-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BULD125KC NPN Transistor Power Innovations Limited
BULD125KC NPN Transistor TRSYS
BULD25 NPN Transistor Power Innovations Limited
BULD25D NPN Transistor Power Innovations Limited
BULD25DR NPN Transistor Power Innovations Limited

Other Datasheets by STMicroelectronics

Part Number Description
BULD741 High voltage fast-switching NPN power transistor
BULD742C NPN power transistor
BULD742CT4 NPN power transistor
BULD1101E High voltage fast-switching NPN Power Transistor
BULD1101ET4 High voltage fast-switching NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BULD741 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. 3 1 DPAK TO-252 IPAK TO-251 3 2 1 Figure 1. Internal schematic diagram Table 1.