STMicroelectronics BULD742CT4
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.| Part No. | BULD742CT4 |
|---|---|
| Datasheet | BULD742CT4 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN power transistor |
| Buy | Stock & Price |
FEATURES
● Low spread of dynamic parameters● High voltage capability
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
APPLICATIONS
● Electronic ballast for fluorescent lighting● Switch mode power supplies
DESCRIPTION
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. 3 1 DPAK Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking BULD742CT4 BULD742C Package DPAK Packaging Tape & reel August 2007 Rev 1 1/12 12 Contents Contents BULD742C 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
