BULT116D Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 9 5 10 2 4 45 -65 to 150 150 Unit V V V A A A A W o o February 2003 1/6 .. THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 2.78 80 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 400 V V CE = 400 V I E = 10 m A I C = 100 m A T c = 125 o C 9 200 Min. Typ. Max. 100 500 Unit µA µA V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ Collector Cut-off Current (I B = 0) Collector-Emitter Saturation Voltage V CE = 200 V IC IC IC IC = = = = 0.5 A 1A 3A 5A IB IB IB IB = = = = 50 m A 0.1 A 0.6 A 1A 250 0.25 0.4 0.7 1.2 1.1 1.5 10 8 0.2 0.2 1.4 0.5 0.1 1.5 20 µA V V V V V V V BE(sat) ∗ h FE ∗ Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Rise Time Fall Time Storage Time INDUCTIVE LOAD Storage Time Fall Time IC = 1 A IC = 5 A I C = 10 m A IC = 5 A V CC = 125 V I B1 = 0.4 A t p = 30 µ s IC = 2 A V BE = -5 V V clamp = 180 V I B = 0.1 A IB = 1 A V CE = 5 V V CE = 5 V IC = 2 A I B2 = -0.4 A (see figure 2) I B1 = 0.4 A L = 500...