Datasheet4U Logo Datasheet4U.com

BULT116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

📥 Download Datasheet

Datasheet preview – BULT116D

Datasheet Details

Part number BULT116D
Manufacturer STMicroelectronics
File Size 163.17 KB
Description MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet download datasheet BULT116D Datasheet
Additional preview pages of the BULT116D datasheet.

📁 Similar Datasheet

  • BULT3N4 - Power Bipolar Medium voltage fast-switching NPN power transistor (ST Microelectronics)
  • BULT3P3 - Power Bipolar Medium voltage fast-switching NPN power transistor (ST Microelectronics)
  • BUL1102E - NPN Transistor (INCHANGE)
  • BUL118D - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BUL118D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)
  • BUL1203E - NPN Transistor (INCHANGE)
  • BUL123S - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • BUL128 - NPN Transistor (INCHANGE)
  • BUL128D - HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR (TGS)
  • BUL128D - Silicon NPN Power Transistor (Inchange Semiconductor)
Other Datasheets by STMicroelectronics
  • BULT118 - NPN Transistor
  • BULT118D - NPN Transistor
  • BUL1101E - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL1102E - High voltage fast-switching NPN power transistor
  • BUL116D - MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL118 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL1203 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
  • BUL1203E - High voltage fast-switching NPN power transistor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com ® BULT116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS: COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS s 3 2 1 SOT-32 DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Published: |