STMicroelectronics BUR51
The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.| Part No. | BUR51 |
|---|---|
| Datasheet | BUR51 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH CURRENT NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
1 2 TO-3 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature February 2003 Value 300 200 10 60 80 16 350 -65 to 200 200 Unit V V V A A A W oC oC 1/4 BUR51 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) V
