Datasheet4U Logo Datasheet4U.com

BUR51 - HIGH CURRENT NPN SILICON TRANSISTOR

General Description

The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUR51 NPN Transistor INCHANGE
BUR51 Bipolar NPN Device Semelab

Other Datasheets by STMicroelectronics

Part Number Description
BUR52 HIGH CURRENT NPN SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
® BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max.