STMicroelectronics BUT11A
BUT11A is a silicon Multiepitaxial Mesa NPN rotransistor in Jedec TO-220 plastic package, Pparticularly intended for switching application.APPLICATIONS
: )s FLYBACK AND FORWARD SINGLE t(sTRANSISTOR LOW POWER CONVERTERS ucDESCRIPTION dThe 3 2 1 TO-220 bsoleteINTERNAL SCHEMATIC DIAGRAM solete Product(s) - OABSOLUTEMAXIMUM RATINGS
ObSymbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0 V) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 9V IC Collector Current 5A ICM Collector Peak Current (tp < 5 ms) 10 A IB Base Current 2A IBM Base Peak Current (tp < 5 ms) Ptot Total Power Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 4 83 -65 to 150 150 A W oC oC March 2004 1/5 BUT11A THERMAL DATA Rthj-case Therm