STMicroelectronics BUT70
The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.| Part No. | BUT70 |
|---|---|
| Datasheet | BUT70 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH POWER NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 200 125 7 40 120 8 24 200 -65 to 150 150 Unit V V V A A A A W o o C C July 1997 1/4 BUT70 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = - 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 70 70 35 35 70 70 35 35 A A A A A A A A IB IB IB IB IB IB IB IB...
