BUT70 Datasheet | STMicroelectronics

DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO I E(RMS) I EM IB I BM P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Emitter Peak Current Base Current Base Peak Current Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 200 125 7 40 120 8 24 200 -65 to 150 150 Unit V V V A A A A W o o July 1997 1/4 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = - 5 V I C = 0.2A L = 25 m H I E = 50 m A IC IC IC IC IC IC IC IC = = = = = = = = 70 70 35 35 70 70 35 35 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 7A 7A 1.75 A 1.75 A 7A 7A 1.75 A 1.75 A 125 7 0.9 1.5 0.9 1.2 1.8 1.9 1.4 1.4 140 T c = 100 C V BE = -1.5V o V BE = - 1.5V T C =100 C o Min. Typ. Max. 1 5 1 4 1 Unit m A m A m A m A m A V V V V V V V V V V A/ µ s V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ∗ Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage T j = 100 o C T j = 100 o C T j = 100 o C Tj = 100 C I B1 = 3.5 A T j = 100 o C o V BE(sat) ∗ Base-Emitter Saturation Voltage dic /dt ∗ Rated of Rise of on-state Collector Current V CC = 100 V t p =3 µ S RC = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 % INDUCTIVE LOAD Symbol tr ts tf Parameter Rise Time Storage Time Fall Time Test Conditions V CC = 90 V V BB = -5 V R B2 = 1.4 Ω L C =0.13 m H V CLAMP =125V I...