STMicroelectronics BUV26
The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.| Part No. | BUV26 |
|---|---|
| Datasheet | BUV26 Download |
| Manufacturer |  STMicroelectronics |
| Description | MEDIUM POWER NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
SWITCHING REGULATORS s MOTOR CONTROL sDESCRIPTION
3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Emitter Current Collector Peak Current (t p <10ms) Base Current Base Peak Current (t p <10ms) Total Dissipation at Tc < 25 o C Total Dissipation at T c < 60 o C Storage Temperature Max. Operating Junction Temperature Value 180 90 7 14 25 4 6 85 65 -65 to +175 175 Unit V V V A A A A W W o o C C June 1997 1/4 BUV26 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.76 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 180V T c = 125 C V CE = 180V VBE = -1.5V T c = 125 C V EB = 5 V I C = 0.2 A L = 25mH I E = 50mA I C = 6A I C = 12A I C =12A I B = 0.6A I B = 1.2A I B = 1.2A 90 7 30 0.6 1.5 2 o o Min.
