BUV98V Datasheet | STMicroelectronics

NPN TRANSISTOR POWER MODULE s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT s Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 1000 450 7 30 60 8 16 150 -55 to 150 150 2500 Unit V V V A A A A W o o o VCEO(sus) Collector-Emitter Voltage (IB = 0) C C C 1/7 September 1997 THERMAL DATA R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied o Max Max 0.83 0.05 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER ICEV I EBO Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5V) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1 8 0. 4 4 2 450 9 1. 5 3. 5 1. 6 tp = 3 µ s 100 8 4 5 0. 4 V V V A/ µ s V V µs µs Unit m A m A m A m A m A V Emitter Cut-off Current VEB = 5 V (I C = 0) I C = 0.2 A L = 25 m H Vc lamp = 450 V I C = 24 A I C = 20 A I C = 30 A I C = 20 A VCE = 5 V IB = 4 A IB = 8 A IB = 4 A VCEO(SUS) - Collecto r-Emitter Sustaining Voltage h FE ∗ V CE(sat )∗ VBE( sat) ∗ di C /dt DC Current Gain Collecto r-Emitter Saturation Voltage Base-Emitter Saturation Voltage Rate of Rise of On-state Collector VCC = 300 V RC = 0 I B1 = 6 A T j = 100 o C - Collecto r-Emitter VCE (3 µs) - Dynamic Voltage - Collector-Emitte r V CE (5 µ s)- Dynamic Voltage ts tf Storage Time...