STMicroelectronics BUW1015
The BUW1015 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.| Part No. | BUW1015 |
|---|---|
| Datasheet | BUW1015 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 19" MONITORS 3DESCRIPTION
2 1 TO-247 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB IBM Ptot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 10 14 18 8 11 160 -65 to 150 150 Unit V V V A A A A W o o C C 1/7 February 2002 BUW1015 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.78 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T j = 125 o C Min. Typ. Max. 0.2 2 100 Unit mA mA µA V V CEO(sus) ∗ Collector-E...
