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BUX77HR - Hi-Rel PNP bipolar transistor

General Description

The BUX77HR is a silicon planar epitaxial NPN transistor in TO-257 package.

It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification.

Key Features

  • BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range.
  • 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. TO-257 Internal schematic diagram.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. TO-257 Internal schematic diagram Description The BUX77HR is a silicon planar epitaxial NPN transistor in TO-257 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification. In case of conflict between this datasheet and ESCC detailed specification, the www.DataSheet4U.com latter prevails. Table 1.