BUX78ESY Datasheet | STMicroelectronics

Features BVCEO IC (max) HFE at 10 V - 150 m A Operating temperature range - - - - - 80 V 5A > 70 -65°C to +200°C TO-257 Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram Description The BUX78HR is a silicon planar epitaxial PNP transistor in TO-257 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5204-006 specification. In case of conflict between this datasheet and ESCC detailed specification, the .. latter prevails. Table 1. Device summary Package TO-257 TO-257 Lead finish Gold Solder Dip Gold Marking 520400606 520400607 BUX78ESY Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack Order codes BUX78ESYHRB BUX78ESY January 2010 Doc ID 16973 Rev 1 1/8 .st. 8 Electrical ratings BUX78ESY, BUX78HR Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC PTOT TSTG TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at TC ≤ 25 °C Storage temperature Max. operating junction temperature Value -100 -80 -6 -5 35 -65 to 200 200 Unit V V V A W °C °C Table 3. Symbol Rth JC Thermal data Parameter Thermal resistance junction-case __ max Value 5 Unit °C/W .. 2/8 Doc ID 16973 Rev 1 BUX78ESY, BUX78HR Electrical characteristics Electrical characteristics...