BUXD87 Datasheet | STMicroelectronics

DESCRIPTION The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 20 -65 to 150 150 Unit V V V A A A A W o o April 1999 1/6 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CEV I EBO VCEO(sus) V BEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ f T ts tf Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Collector-Base Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency RESISTIVE LOAD Storage Time Fall Time Test Conditions V CE = 1000 V V CE = 1000 V V EB = 5 V I C = 100 m A I C = 10 m A I C = 0.1 A I C = 0.2 A I C = 0.2 A I C = 50 m A I C = 40 m A I C = 50 m A V CC = 250 V I B1 = 40 m A t p = 20 µ s IB = 0.01 A IB = 0.02 A IB = 0.02 A VCE = 5 V VCE = 5 V VCE = 10 V f=1MHz I C = 200 m A I B2 = -80 m A 50 12 20 4.5 0.5 MHz µs µs 450 5 0.8 1 1 T j = 125 o C Min. Typ. Max. 100 1 1 Unit µA m A m A V V V V V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Derating Curves 2/6 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Reverse Biased SOA 3/6 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40...