STMicroelectronics BUXD87
The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.| Part No. | BUXD87 |
|---|---|
| Datasheet | BUXD87 Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE NPN POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
: SWITCH MODE POWER SUPPLIES s GENERAL PURPOSE SWITCHING s DPAK TO-252 (Suffix "T4")DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 20 -65 to 150 150 Unit V V V A A A A W o o C C April 1999 1/6 BUXD87 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO VCEO(sus) V BEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT ts tf Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Collector-Emitt...
