STMicroelectronics BUZ25
N-Channel MOSFET
APPLICATIONS
:● UNINTERRUPTIBLE POWER SUPPLIES
● MOTOR CONTROLS TO-3 N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch- INTERNAL SCHEMATIC DIAGRAM ing times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include DCIDC converters, UPS, battery chargers, secondary regulators, ser- vo control, power audio amplifiers and robotics. 5
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (continuous) Tc =35°C Drain current (pulsed) Total dissipation at Tc < 25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1)● Introduced in 1988 week 44 June 1988 100 V 100 V ±20 V 19 A 75 A 78 W -55 to 150 °C 150 °C C 55/150/56 1/4 191 BUZ25 THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _amb Thermal resistance junctio...