STMicroelectronics BUZ353
N-Channel MOSFET
APPLICATIONS
:● SWITCHING POWER SUPPLIES
● MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies and motor speed control. TO-218 INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KQ) Gate-source voltage Drain current (continuous) Tc=25°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 500 V 500 V ±20 V 9.5 A 38 A 125 W -55 to 150 °C 150 °C E 55/150/56 1/4 253 BUZ353 THERMAL DATA Rthj _ case Thermal resistance junction-case Rthj _ amb Thermal resistance junction-ambient max maxELECTRICAL CHARACTERISTICS
(Tj = 25°C unless other...