STMicroelectronics BUZ60B
N-Channel MOSFET
| Part No. | BUZ60B |
|---|---|
| Datasheet | BUZ60B Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● ELECTRONIC LAMP BALLAST
● DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications.
APPLICATIONS
include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps. TO-220 INTERNAL SCHEMATIC DIAGRAM 5ABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drai n-source voltage (VGS =0) Drain-gate voltage (RGS =20 Kn) Gate-source voltage Drain current (continuous) Tc =25°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 400 V 400 V ±20 V 4.5 A 18 A 75 W - 55 to 150 °C 150 °C E 55/150/56 1/4 219 BUZ60B THERMAL DATA Rthj _case Thermal resistance junction-case Rthj _amb Th...
