STMicroelectronics BUZ76A
N-Channel MOSFET
APPLICATIONS
● ULTRA FAST SWITCHING● EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL
APPLICATIONS
:● ELECTRONIC LAMP BALLAST
● DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications.
APPLICATIONS
include off-line use, constant current source, ultrasonic equipment and switching power supply start-up circuits. , TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (continuous) Tc =30°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max. operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 400 V 400 V ±20 V 2.6 A 10 A 40 W -55 to 150 °C 150 °C E 55/150/56 1/4 249 BUZ76A THERMAL DATA Rthj _case Thermal resistance junction-case max Rthj _...