STMicroelectronics BV32
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.| Part No. | BV32 |
|---|---|
| Datasheet | BV32 Download |
| Manufacturer |  STMicroelectronics |
| Description | High voltage fast-switching NPN power transistor |
| Buy | Stock & Price |
FEATURES
● High voltage capability● Low spread of dynamic parameters
● Minimum lot-to-lot spread for reliable operation
● Very high switching speed
APPLICATIONS
● Compact fluorescent lamps (CFLS)● SMPS for battery charger
DESCRIPTION
The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1. Device summary Order codes STBV32 STBV32G STBV32-AP STBV32G-AP Marking BV32 BV32G BV32 BV32G Package TO-92 TO-92 TO-92AP TO-92AP July 2008 Rev 8 Packaging Bulk Bulk Ammopack Ammopack 1/11 11 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms) Collector current (f ≥ 100 Hz, duty-cycle ≤ 50%, TC = 25 °C) Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Table 3.
