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BV32G - High voltage fast-switching NPN power transistor

Download the BV32G datasheet PDF. This datasheet also covers the BV32 variant, as both devices belong to the same high voltage fast-switching npn power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • High voltage capability.
  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BV32-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STBV32 High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps (CFLS) ■ SMPS for battery charger Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. TO-92 TO-92AP Figure 1. Internal schematic diagram Table 1.